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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz HIGH EFFICIENCY add=39% at 5.9 to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 G VDS= 10V f = 5.9 - 6.75GHz CONDITION UNIT MIN. TYP. MAX. dBm dB A dB % Two Tone Test Po=35.0dBm (Single Carrier Level) 45.0 8.0 -42 45.5 9.0 8.0 39 -45 8.0 9.0 0.8 9.0 100 add IM3 IDS2 dBc A Channel Temperature Rise Tch VDS X IDS X Rth(c-c) C Recommended gate resistance(Rg) : Rg=Rg1(10 )+Rg2(18 )= 28 (MAX.) + ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case UNIT MIN. mS V A V C/W -1.0 -5 TYP. MAX. 6500 -2.5 20 1.0 -4.0 26 1.3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised Aug. 2000 TIM5964-35SLA-251 ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 115 175 -65 +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm Gate Source Drain 2.60.3 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM5964-35SLA-251 RF PERFORMANCES Output Power vs. Frequency 48 47 Po(dBm) VDS= 10 V IDS 8 A Pin= 36.5 dBm 46 45 44 43 5.75 6.00 6.25 6.50 Frequency (GHz) 6.75 Output Power vs. Input Power 48 47 46 45 Po(dBm) 44 43 42 41 40 39 29 31 33 Pin(dBm) 35 37 39 add Po f=6.75 GHz VDS= 10 V IDS 8 A 100 90 80 70 60 50 40 30 20 10 add(%) 3 TIM5964-35SLA-251 POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 PT(W) 60 40 20 0 0 40 80 120 160 200 Tc(C) IM3 vs. OUTPUT POWER CHARACTERISTICS -10 VDS= 10 V IDS 8 A f= 6.325GHz f= 5MHz -20 IM3(dBc) -30 -40 -50 -60 30 32 34 36 38 Po(dBm), Single Carrier Level 4 40 |
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